Publishable Summary for 20IND05 QADeT

The specific objectives of the project are:

  1. To develop single‑atom‑like systems in diamond or other suitable materials, e.g., silicon carbide (SiC), silicon (at different ion energies in the 20 keV ‑ 50 keV range) and 2D materials (ion energies in the 15 keV ‑ 30 keV range), using controlled ion implantation, aiming at a deterministic placement of individual emitters with a spatial resolution below 500 nm in a single‑ion regime, and to develop the associated metrological capabilities to support this.
  2. To develop robust and accurate QSs using controlled implantation based on NV centres in diamond (or other suitable materials) for the measurement of magnetic fields, electric quantities, temperature, and stress (as well as other possible physical observables of interest). In addition, to metrologically compare the sensitivity of these QSs with state of art nitrogen‑vacancy (NV)‑based sensors.
  3. To investigate the possibility of developing QSs for the measurement of magnetic fields, electric quantities and temperature via deterministic controlled ion implantation based on novel defects in diamond (including promising complexes based on Si, Ge, He, Sn, Pb and other impurities) and in other suitable materials.
  4. To develop reliable methods for the production (e.g. conventional and non-conventional annealing in the 600 °C ‑ 1200 °C temperature range) and measurement of single‑atom‑based sensor devices, including modelling their behaviour via tight‑binding methods. In addition, to develop the necessary traceability chains for such single‑atom‑based sensors in the photon flux regime of 107 ‑ 108 photons per second (approximately in the 600 nm ‑ 900 nm wavelength range).
  5. To facilitate the take up of the knowledge, technology and measurement infrastructure developed in the project by the measurement supply chain, standards developing organisations (ISO, CEN) and end users (quantum sensing, computing, and communications).